Abstract
We have studied interaction of multiply charged manganese nanoclusters with Se and Te impurity atoms in silicon after simultaneous and sequential codoping. The results demonstrate that, after diffusion doping, certain thermal annealing conditions lead to strong interaction of Mn with Se and Te impurities. We have determined the optimal temperature of such interaction, proposed an interaction mechanism, and demonstrated the possibility of the formation of multicomponent nanoclusters of the form Si2Mn2−Se2+ and Si2Mn2−Te2+ in the silicon lattice without considerable distortion of chemical bonds in the silicon lattice.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
