Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

Abstract

We have studied the interaction of manganese nanoclusters with sulfur atoms in silicon. The results indicate that both simultaneous and sequential codoping with manganese and sulfur has little effect on the electrical properties (resistivity, carrier mobility, and conductivity type) of silicon. There is no extrinsic photoconductivity in the IR spectral region, and the material has only a small positive magnetoresistance. According to electron paramagnetic resonance data, the material contains only atomic manganese. Sulfur atoms in the silicon lattice are assumed to facilitate the capture of doubly charged manganese interstitials (Mn2+) at negatively charged vacancies, resulting in the formation of a multicomponent impurity cluster of composition Si2S2+Mn2− in the silicon lattice throughout the crystal. The optimal thermal annealing conditions for the formation of such clusters are determined. The ability to produce Si2S2+Mn2− clusters with controlled concentration allows one to tailor the main fundamental parameters of silicon and opens up new possibilities for such materials in nano- and microelectronic device development.