Abstract
Abstract Silicon single crystals were implanted under various conditions with Zr, Hf, Tl, and Hg. The yield of scattered 1.8 MeV 12C-ions was studied as a function of the angle of incidence. Around the (111) direction the normal channeling dip was observed. Around the (110) direction either a narrow peak or a narrow peak superimposed on a channeling dip was found. The occurence of the peak is interpreted as being caused by scattering from impurity atoms located in the tetrahedral interstitial holes in the silicon lattice. For a beam entering along a (111) direction these atoms are screened, but they are fully exposed to a beam entering parallel to a (110) direction. The implications of this effect to earlier measurements of the lattice location of impurity atoms in silicon and germanium will be discussed. A similar effect has recently been observed at the University of Aarhus.(6)
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