Inter and intra band impurity-related absorption in (In,Ga)N/GaN QW under composition, size and impurity effects

Redouane En-Nadir,Anouar Jorio,Haddou El Ghazi,Izeddine Zorkani,M El Ganaoui,E Sediki,K Ragui,R Bennacer

doi:10.1051/matecconf/202033001017

Redouane En-Nadir, Anouar Jorio + Show 6 more

Open Access

https://doi.org/10.1051/matecconf/202033001017

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Abstract

In this paper, we theoretically investigate the impacts of Internal well composition, size and impurity's position on the inter valence-conduction bands and intra conduction band optical absorption in GaN/(In,Ga)N/GaN hetero-structure. Based on the numerically finite element method (FEM), the impurity's related Schrödinger equation is solved for the finite potential barrier considering the dielectric constant and effective-mass mismatches between the well and its surrounding matrix. Our results show that the absorption is strongly governed by the dipole matrix element and initial and final implied states transition energies. For a fixed barrier width, the absorption spectra are found red-shifted (blue-shifted) with increasing the well width (In-concentration). It is also shown that the impurity's absorption phenomenon is more pronounced for the off-center case compared to the on-center one. We conclude that the proper control of these parameters is required to best understanding of the optical absorption for solar cell applications.

Highlights

Since the discovery of low and wide energy band-gap materials, such as InN (0.78 eV) and GaN (3.42 eV) opened access to potential applications based on IIInitride semiconductors in the field of microelectronics and photonics
The combination of these two new materials gave a new InGaN material characterized by its adjustable band-gap energy which could be varies between 0.78 eV and 3.42 eV, this property makes it possible to absorb the entire spectrum of visible light
To improve optical and electrical properties of optoelectronic devices, researchers have been moved from the study of massive to Nano-structured materials, such as simple quantum wells (SQWs) [9].spherical quantum dot (SQDs) [10] quantum rings (QRs) [11] and quantum well wire(QWWs) [12]

Summary

Introduction

Since the discovery of low and wide energy band-gap materials, such as InN (0.78 eV) and GaN (3.42 eV) opened access to potential applications based on IIInitride semiconductors in the field of microelectronics and photonics. The combination of these two new materials gave a new InGaN material characterized by its adjustable band-gap energy which could be varies between 0.78 eV and 3.42 eV, this property makes it possible to absorb the entire spectrum of visible light. We will concentrate to investigate the size, the impurity position and the indium concentration effects on the OACs related to intrasuband conduction and inter conduction-valence band transition in wurtzite unstrained (In,Ga)N/GaN QW based the numerical finite elements method (FEM)

Theoretical framework

Results and discussion

Conclusion