Abstract
In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.
Highlights
Low-dimensional systems (LDS) based on single and multiple quantum well (SQW, MQW) quantum well wire (QWW) and quantum dot (QD) form a great domain for research both theoretically and experimentally [1-16]
During the few last decades, IIInitrides semiconductor systems such AlN, GaN, (In,Ga)N and (Al,Ga)N have emerged as the adequate materials for applications such solar cell, laser, diode laser. They present attractive properties like chemical and thermal stabilities, great radiation resistance and high absorption and because the recent progress in quality of materials grown by different technique such beam epitaxy molecular (BEM) and metal organic chemical vapor deposition (MOCVD) [17-26]
Our calculations are performed based on the finite element method
Summary
Low-dimensional systems (LDS) based on single and multiple quantum well (SQW, MQW) quantum well wire (QWW) and quantum dot (QD) form a great domain for research both theoretically and experimentally [1-16]. During the few last decades, IIInitrides semiconductor systems such AlN, GaN, (In,Ga)N and (Al,Ga)N have emerged as the adequate materials for applications such solar cell, laser, diode laser They present attractive properties like chemical and thermal stabilities, great radiation resistance and high absorption and because the recent progress in quality of materials grown by different technique such beam epitaxy molecular (BEM) and metal organic chemical vapor deposition (MOCVD) [17-26]. It is well known that the impurity in such reduced system has a great impact on the electronic and optical properties It is widely studied through several papers [27-32] theoretically and experimentally. The effects of impurity’s position, structure size, In-composition and coupling effects are numerically investigated on the ground-state binding energy based on the FEM
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