Abstract
This paper presents a new process for the integration of high voltage devices and low voltage circuitry on thick SOI substrates. Complete dielectric isolation between high voltage and low voltage devices has been realized by deep trench technology. Diodes and transistors with breakdown voltages of 600 and 420 V, respectively, have been demonstrated within these trench structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
