Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology

Mohammadreza Dolatpoor Lakeh,Wilfried Uhring,Shaochen Gao,Jean-Baptiste Schell,Dylan Issartel,Alexandre Dartigues,Andreia Cathelin,Jean-Baptiste Kammerer,Francis Calmon

doi:10.1016/j.sna.2023.114744

Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology

Mohammadreza Dolatpoor Lakeh, Wilfried Uhring + Show 7 more

https://doi.org/10.1016/j.sna.2023.114744

Copy DOI

Export

Save

Cite

Journal: Sensors and Actuators A: Physical	Publication Date: Dec 1, 2023
Citations: 4

Affiliation: University of Strasbourg, French National Centre for Scientific Research, STMicroelectronics (France)

#FD-SOI CMOS Technology #Monolithic 3D #FD-SOI CMOS #CMOS Technology

Abstract
Full-Text
Similar Papers

Abstract

Listen

Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology

Full Text

Published Version

Check institute access

Open DOI Link

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

More From: Sensors and Actuators A: Physical

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.

R Discovery Prime

Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology