Instability of crystal/melt interface including twin boundaries of silicon

Abstract

Listen

Translate article

The instability of crystal/melt interfaces including twin boundaries and no twin boundaries of silicon were studied using in situ observation technique. It was found that the instability is promoted at the twin boundaries on the flat crystal/melt interface. We showed that the Mullins and Sekerka theory cannot apply to an interface including twin boundaries, while it can apply to an interface including no twin boundaries. It was shown that the instability occurs even in a positive temperature gradient and the wavelength of the perturbation is determined by the twin spacing in the case of an interface including twin boundaries.