Abstract
The mechanism of the drain current saturation in the output characteristics of III-V tunneling field effect transistor (TFET) is explained in detail using numerical simulations as well as physics-based analytical models. We clearly identify the impact of the source doping on delayed output saturation, and non-linear turn on behavior observed in the output characteristics of TFET. Our model uses Wentzen-Krammel-Brillouin approximation and considers the exponentially decaying potential profile in the channel. The choice of source doping in III-V p-channel TFET requires tradeoff between maintaining steep switching and delayed saturation voltage which is of importance for complementary TFET logic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
