A three-dimensional numerical study of transport characteristics of Silicene Nanoribbon TFETs in comparison to GNR TFETs

Abstract

This paper presents a simulation study of p-i-n tunneling Silicene Nanoribbon (SiNR) tunnel field effect transistor (TFET) along with its comparison to a Graphene Nanoribbon (GNR) TFET. The simulations are carried out within non-equilibrium function formalism. The study of effect of variation of doping density in drain region shows significant increase in the off-state current (Ioff) with the increase in drain doping density of both TFETs. Further investigation of band structure shows availability of wider tunneling energy window in SiNR TFET as compared to that in GNR TFET which results in higher on-state current (Ion) in SiNR TFET. Moreover the channel length variation shows negligible effect on the Ion whereas the Ioff decreases with channel length. The comparative study of both SiNR and GNR TFET shows the potential of SiNR TFET performance comparable to that of GNR TFET.