Abstract
The characteristics of Al/InP Schottky diode without and with (NH4)2S treatment (Al/S-InP) and corresponding MOSFET with atomic layer deposited TiO2/Al2O3 stacked gate oxides were investigated. The Schottky barrier height (fBp) of Al/InP with (NH4)2S treatment is improved from the removal of native oxides. For Al/S-InP Schottky barrier MOSFET with TiO2/Al2O3 gate oxides, good drain current-voltage and sub-threshold characteristics were obtained. The channel mobility and Tran conductance can reach 202 mm2/Vs and 4.45 × 10-7 S/µm at VDS = 1 V.
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