Abstract
The characteristics of Schottky tunneling barrier diodes and corresponding MOSFET with atomic layer deposited TiO2/Al2O3 stacked gate oxides were investigated. The Schottky barrier height is lowered from Schottky tunneling barrier. For Schottky tunneling barrier MOSFET with TiO2/Al2O3 gate oxides, good drain current-voltage and sub-threshold characteristics were obtained. This enhancement mode MOSFET has fairly good gate control and low gate leakage. The drain current is 18 μA/μm at V DS = 3 V, V GS = 2 V.
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