Abstract
Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 621 GHz and a simultaneous f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> =5 V are measured for 0.2 × 4.4-μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> in excess of 600 GHz.
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