Abstract
The contradictions between results of commonly used charge carrier transport equations resulting from electron-hole scattering on the one hand and experimental data concerning transport coefficients in an electron-hole plasma on the other are pointed out. To resolve them, the influence of the injection level on the transfer of charge carrier momentum to the phonon system is investigated. The effective momentum transfer mobility for electrons and holes is derived, taking into account the indirect influence of electron-hole scattering on the momentum transfer to acoustical and high-energetic phonons in silicon. The result of the calculation is compared with measurements, and an analytical fitting formula for the implementation of the injection dependent phonon scattering into device simulators is presented.
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