Abstract
In this article, the voltage blocking capability of UMOS power devices is experimentally demonstrated to be limited by the onset of a premature breakdown at the corners of the trench located at the device periphery. With the aid of numerical simulations performed in cylindrical co-ordinates, it is shown for the first time that a race-track shape of the trench gate fingers alleviates the electric fields at the trench corners and maximizes the UMOS voltage blocking capability. In addition, it is also shown that the breakdown voltage at the trench corners can be made to exceed the UMOS unit cell breakdown voltage by using a deep p diffusion around the trenches located at the device periphery.
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