Abstract
Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
