Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface

Abstract

Atomically clean SiC wafers with a root-mean-square roughness of 2 nm were bonded in ultrahigh vacuum at 20 MPa of applied uniaxial pressure at temperatures as low as 800 °C. Electrical measurements showed that azimuthal orientation of the bonded couple significantly influences the electrical character of the junction. A low-resistance ohmic interface can be created by high-temperature fusion of aligned 6H–SiC/6H–SiC wafers.