Abstract
The effects of the composition of oxynitride passivations (SiO x N y ) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiO x N y passivating layers were deposited covering the whole range of dielectrics combinations from SiO x to SiN y . Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiO x N y passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications.
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