Influence of Iodine Doping on the Properties of Amorphous Carbon Thin Films Deposited from Camphoric Carbon Precursor

Abstract

odine incorporation to amorphous carbon (a-C) thin films offers many advantages and a full understanding of the properties of iodine doped amorphous carbon (a-C:I) thin films which is necessary for applications like optoelectronics devices and photovoltaic solar cells. Iodine doped amorphous carbon thin films have been doped by thermal chemical vapour deposition (CVD) technique at different amount of iodine. The effects of iodine amount on the properties of a-C:I thin films have been investigated using standard measurement techniques and discussed. FESEM studies have been performed on the doped films for the surface morphology studies. Raman studies have been carried out on the doped samples for the chemical bonding of carbon atoms. The sp2 and sp3 contents have found to be dependent on the amount of iodine. For evaluation of the electrical and optical properties of the doped films, the current-voltage (I-V) measurement and UV-Vis-NIR spectroscopy have been performed on the a-C:I thin films. It has been observed that the a-C:I thin films doped with 1g has higher electrical conductivity and lowest optical band gap.