Abstract
Amorphous carbon (a-C) thin films were deposited on silicon (Si) substrate by pyrolysing camphor oil at various temperatures with thermal chemical vapor deposition (CVD) technique. The deposited a-C thin films were characterized by Current-Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. The electrical and optical properties of these films have been studied. It was found that increasing deposition temperature had influence on the a-C thin films properties. In addition the carrier gas flow showed a secondary impact on the properties of a-C thin films. The resistivity of a-C thin films decreases when the deposition temperature increases. However, at higher deposition temperature the conductivity increases due to the formation of more disorder sp2 carbon site.
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