Influence of dislocations on photovoltaic properties of multicrystalline silicon solar cells

Abstract

expdrimentaux. Abstract. The photovoltaic properties of large grained polycrystalline silicon solar cells are mainly affected by the presence of dislocations. Both the recombination of carriers at dislocation (which degrades the photocurrent) and the transport of carriers along the dislocation cores crossing the junction (which increases the dark current) are taken into account. The influence of the density N~~, and recombination activity S~ of dislocations on the short circuit current density J~~, open circuit voltage V~~, fill factor FF, and efficiency 1~ are computed. The computed values are compared to experimental results.