Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. II. Experimental results

Abstract

The predictions of the model given in part I are tested by means of a set of diode arrays which allow us to measure the electron effective diffusion length (Leff) and the short circuit photocurrent (Jsc) in large grained polycrystalline silicon cells. The experimental dependencies of Leff and Jsc on the average of the dislocation density (Ndis) fit well with the computed curves, and then the mean value of the recombination strength of dislocations (Sd) may be evaluated. As predicted by the model, the reduction of the value of Sd by a passivation technique like hydrogenation, significantly increases the values of Leff and Jsc. The good agreement between computed and experimental results indicate that dislocations are the most harmful defects.