Abstract
ZnSnO3 thin film was deposited at different deposition time (0.5 h, 2 h, 4 h and 6 h) using sol-gel immersion method and the electrical, optical and structural properties of this film was investigated. This research involved the preparation of nanostructured ZnO thin film by using RF magnetron sputtering, preparation of ZnSnO3 sol-gel solution, metal contact deposition and characterization of humidity sensor. The thin film was characterized using current-voltage (I-V) measurement (Keithley 2400) and field emission scanning electron microscopy (FESEM) (JEOL JSM 6701F) for electrical and structural properties respectively. The sensor was characterized using I-V measurement in a humidity chamber (ESPEC SH-261) and the chamber has been set at room temperature with varied relative humidity (% RH), in the range of 40-90% RH. The film prepared with a deposition time of 2 h shows better sensitivity for humidity sensor. The FESEM investigation shows that crystal size increases with the increasing deposition time.
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