Abstract
Amorphous carbon nitride (a-CNx) is a well-known material that can be used in various applications such as coating for hard disk, wear resistant, humidity sensor and others. In this research, a-CNx thin films have been deposited by using radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) with the mixing of pure methane (CH4) and nitrogen (N2). The gas ratio of CH4/N2, electrode distance, pressure and temperature of deposition is kept constant while deposition time is allowed to vary from 30 to 150 minutes. Raman spectroscopy and field emission scanning electron microscopy (FESEM) have been used to study the bonding and morphology of these films respectively. An increase in deposition time resulted with thedecrease in sp2 content in the a-CNx thin films. Theincrease in the Id/Ig intensity ratio with the increase in deposition time can be explained by the reducing size of graphitic cluster. Long deposition time retarded the growth rate of a-CNx thin films due to etching effects. Longer exposure to the etching effect resultingin the creation of small graphitic cluster with the formation of spongy-like porous features.
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