Abstract
This paper explains the effects of the annealing temperature on structural and electrical properties of Aluminum (Al) thin films. Al thin films were deposited on glass substrate by thermal vacuum evaporator. The films were then annealed at 100°, 200°, 300°, 400°, and 500°C for 1 hour. The surface morphology of Al films after annealing were characterized using atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). The electrical properties were characterized using four point probe. From the results of this experiment, the roughness of Al films gradually decrease from 8.5 nm (before annealing) to 7.7 nm and the grain size gradually increase from 127 nm to 145 nm, when the temperature of annealing increased. The resistivity of the films was also decreased from 2.32 x 10-5 ohm.cm to 1.9 x 10-5 ohm.cm when the samples were annealed from 100° to < 400°C that depended on roughness. However, when annealed from 400° to 500°C, the resistivity shows dependency on grain size, which result on the increasing of resistivity to 2.77 x10-5 ohm.cm.
Published Version
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