Abstract
Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device’s ION/IOFF ratio reached 104. The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.
Highlights
Semiconductor nanowire (NW) shows potential for its application as a fundamental building block for nano-electronic and nanophotonic devices
The method of growing silicon nanowire (SiNW) using plasma was reported in this paper
Different concentrations ranging from 1 × 1016 cm−3 to 1 × 1019 cm−3 of the SiNWs with diameters from 5 nm to 20 nm were fabricated and characterized
Summary
Semiconductor nanowire (NW) shows potential for its application as a fundamental building block for nano-electronic and nanophotonic devices. It offers substantial promise for integrated nanosystems [1,2,3]. For a transistor based on silicon nanowire to be used in a modern integrated circuit, its size should be scaled down continuously while keeping its electrical characteristics. The deterioration in the effective carrier concentration of the nanowire with a diameter in tens nanometers was a severe problem, which could influence the characteristics of the SiNW transistor at a nanometer scale. The SiNW transistor with 5 nm diameter was fabricated based on the prepared nanowire and it showed good characteristic results
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