Study of silicon nanowire field effect transistor with different oxide material using fettoy simulator

Abstract

As the MOSFET gate length enters the nanometer regime, short channel effects (SCE) such as threshold voltage (VT) roll off and drain- induced- barrier- lowering becomes increasingly significant, which limits the scaling capability of planar bulk or silicon-on-insulator (SOI) MOSFET. At the same time the relatively low carrier mobility in silicon may also degrade the MOSFET device performance. For these reasons, various novel device structures and materials such as silicon nanowire transistors, carbon nanotubes, new channel materials, molecular transistors are being extensively explored. Among all these, promising post CMOS structures, the silicon nanowire transistor (SNWT) has its unique advantage - The SNWT is based on silicon a material that the semiconductor industry has been working on for over forty years; it would be really attractive to stay on silicon and also achieve good device matrices that nano-electronics provides. The main objective of this paper is to present Simulation of silicon Nanowire field Effect Transistor (SNWFET) with different oxide having different k value and observe the effect on characteristics thereon using Fettoy Simulator.