Characterization of piezoresistive coefficients in silicon nanowire transistors

J Pelloux-Prayer,J.-L Rouviere,M Casse,G Reimbold,S Barraud

doi:10.1109/ulis.2014.6813903

Characterization of piezoresistive coefficients in silicon nanowire transistors

J Pelloux-Prayer, J.-L Rouviere + Show 3 more

https://doi.org/10.1109/ulis.2014.6813903

Copy DOI

Publication Date: Apr 1, 2014

Affiliation: CEA LETI, Université Grenoble Alpes, Grenoble Institute of Technology, CEA Grenoble, Atomic Energy and Alternative Energies Commission

#Silicon Nanowire Transistors #Nanowire Transistors + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

This paper presents an experimental study of the piezoresistive (PR) coefficients in silicon nanowire (NW) transistors as a function of NW width down to 10nm. We have evidenced the variation of these coefficients as the width shrinks from wide SOI down to nanowire transistors, for both NMOS and PMOS. Below a critical width W crit ≈ 100nm, the longitudinal PR coefficient is improved for electrons, whereas it is reduced for holes. Our results are explained by the modification of the Si NW's bandstructure with narrow dimensions.

Full Text