Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Abstract

The incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and (11¯01) facets at both edges. A stack of five, ∼3 nm-thick, InxGa1−xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (∼0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. The In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar (11¯01) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-InxGa1−xN/GaN QWs on Si(001) in photoluminescence.