InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate

Abstract

InAlP-capped Ge nFETs with sub-400 °C process modules were reported. Ge nFETs on Ge substrates with InAlP/Al 2 O 3 /HfO 2 as gate dielectrics demonstrate the highest reported Ge (100) peak μ eff for inversion mode devices. In addition, the gate stack with HfO 2 directly deposited on the InAlP cap was implemented in Ge nFETs on 300 mm Si substrates for the first time. This leads to the realization of long-channel Ge nFETs with 1.06 nm EOT, high drive current, excellent S, and low gate leakage current. InAlP is a good passivation technique for Ge nFET gate stack formation, and could enable the use of Ge channel for both nFETs and pFETs in future high performance and low power logic applications.