Abstract
In this paper, the applicability of an ultra-high vacuum (UHV) contactless capacitance-voltage ( C-V) measurement method is evaluated for use in non-destructive characterization of crystal growth and device processing steps for the compound semiconductor heterostructure microelectronics. The UHV gap length between the sample surface and the field plate was made by an optical measurement using the Goos–Haenchen effect, and its accuracy was discussed by a theoretical calculation. Then, zero-bias position of the surface Fermi level, conduction type and doping were successfully determined on free surfaces of GaAs and InP by basic C-V measurements. Finally, the technique was applied to characterize each step of the UHV-based surface passivation process for InP utilizing the Si interface control layer (Si ICL). Change of the surface state distribution after each step was successfully detected without breaking UHV, demonstrating the powerful capability of the method.
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