Abstract
A totally in situ surface passivation process of InP consisting of growth of an ultrathin Si interface control layer (Si ICL) and its subsequent partial nitridation is described. The process was characterized and optimized by in situ ultrahigh vacuum (UHV) contactless capacitance–voltage ( C– V) measurements and X-ray photoelectron spectroscopy (XPS) measurements. An electron cyclotron resonance (ECR)-N 2 plasma process and a nitrogen radical process were compared for partial nitridation of Si ICL. In situ XPS measurements provided useful information on the thickness and composition of the nitrided surface layer. UHV C– V measurements showed that the nitridation process using ECR-N 2 plasma was more favorable, realizing a full swing of Fermi level almost over the entire bandgap. A metal–insulator–semiconductor (MIS) capacitor was fabricated by further depositing a thick Si 3N 4 layer on the ECR plasma processed structure. Conventional MIS C– V measurements confirmed an excellent interface property, proving the effectiveness of the in situ passivation process.
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