Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well

Abstract

A novel oxide-free InP metal-insulator-semiconductor field-effect transistor (MISFET) with an ultra narrow Si surface quantum well in the gate structure was proposed and fabricated. The ultra thin Si3N4/Si interface structure was realized by molecular-beam epitaxy (MBE) growth and partial nitridation of a pseudomorphic Si interface control layer (Si ICL) on an InP epitaxial layer. Passivation effect of the InP surface was monitored in situ by X-ray photoelectron spectroscopy (XPS) and ultrahigh vacuum (UHV) contactless capacitance–voltage (C–V) methods. A strong surface passivation effect was achieved after partial nitridation of the Si ICL with an optimal nitridation time. The fabricated MISFET with the Si-ICL passivation exhibited excellent gate control capability and stable operation. The drift of the drain current was found to be as small as 1.9% after 104 s operation.