Abstract
We report the growth of self-doped silicon nanowires (SiNWs), using gallium and bismuth catalysts, by employing a vapour-liquid-solid method. This enables the formation of both p- and n-doped nanowires without the use of expensive and toxic gases that are conventionally used and opens a new route to a simplified and cost effective process for doping SiNWs. The chosen catalysts have the lowest eutectic temperature available for the growth of silicon nanowires. The growth of self-doped SiNWs, for the fabrication of photovoltaic cells, has been demonstrated for the first time in this study.
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