Abstract
AbstractThe effects of hydrogen chloride (HCl) on the growth of silicon nanowires by Chemical Vapour Deposition are investigated. HCl is found to enable the growth of small diameter gold-catalyzed silicon nanowires while reducing the kink occurrence. Specific growth sequences are presented in order to obtain a one-to-one ratio of nanowire growth versus gold colloidal seed. Other growth sequences using HCl are illustrated but achieve mixed results concerning the nanowire structure and the surface state.
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