Improvement in electrostatic effeciency using workfunction modulated dual metal gate FinFET

Abstract

Abstract This paper demonstrates a 3-D simulation study of a workfunction modulated dual material gate FinFET (WMDMGF). The source side gate material workfunction of a dual material gate FinFET is modulated linearly keeping drain side material workfunction to be constant. This model provides improvement in terms of DC performance such as better drive current and minimum threshold voltage. Thus, enhancing the switching characteristics of the device and providing better speed. The model is simulated using Silvaco TCAD tool, and the results are compared with single metal gate and dual metal gate FinFET performance.