Abstract
This paper demonstrates a 3-D simulation study of a workfunction modulated dual material gate FinFET (WMDMGF). The source side gate material workfunction of a dual material gate FinFET is modulated linearly keeping drain side material workfunction to be constant. This model provides improvement in terms of DC performance such as better drive current and minimum threshold voltage. Thus, enhancing the switching characteristics of the device and providing better speed. The model is simulated using Silvaco TCAD tool, and the results are compared with single metal gate and dual metal gate FinFET performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
