Abstract
To extend the high performances of the GaAs MSM photodetectors with InGaP buffer and capping layers, the (NH 4) 2S x treatment of InGaP is investigated. The surface states are reduced by sulfur passivation. Whereupon, the performances of InGaP Schottky contact with Ti/Pt/Au metals are improved. The improved dark current and insensitive responsivity with incident optical power are demonstrated by suitable process control of sulfur passivation.
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