Improved pattern fabrication of naphthoquinonediazide-based deep ultraviolet resist by alkaline surface treatment

Abstract

This paper presents the high‐aspect‐ratio pattern fabrication method for KrF excimer laser lithography. The alkaline surface treatment of a resist before exposure can enhance the contrast of a conventional naphthoquinone‐diazide‐based deep UV positive resist. It has been found that the improvement depends upon the structure of the resist. High‐aspect‐ratio sub‐half‐micron patterns of the deep UV resist with an easy azo‐coupling reaction were successfully attained using this simple method without compromising sensitivity.