Abstract
The life of optical lithography has been prolonged by introducing Deep UV sources and its limit seems to be in the sub-half-micron to quarter-micron region. In Deep UV lithography, KrF excimer laser lithography is the most promising technique for the next generation. We have evaluated the resolution capability of a KrF excimer laser stepper using a conventional novolac-type resist. With this combination, it has been shown that an alkaline treatment is an effective method of improving the resist profile, which means that a conventional resist is applicable to excimer laser lithography. The mechanism of resist profile improvement is also discussed. We assert that a kind of chemical reaction is caused during the PEB step under certain conditions.
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