Abstract
29 Si + ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100°C was used to create n +/ p junctions. The junction ideality factor was ∼2, indicative of a high density of generation–recombination centers, and the breakdown voltage was 13 V at 5.1×10 −4 A cm −2. Transmission electron microscopy revealed a high density (>10 10 cm −2) of implantation damage-related dislocations in the material, due to incomplete annealing of displaced lattice atoms. Higher annealing temperatures and improved junction passivation are needed for improved stand-off voltages.
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