Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

Abstract

This dissertation demonstrates the reliability issues associated with the temperature of Ge multi-channel fin shaped field-effect transistor (Mch-FinFET). Temperature dependence on short channel effectss such as threshold voltage (Vth), sub-threshold swing (SS), and switching ratio are observed. The variation in temperature on various important radio frequency (RE)/analog, linearity, and harmonic distortion characteristics are studied and analyzed over a wide range of temperatures (300–500 K). The simulation study revealed that Mch-FinFET devices exhibit 61.6% improvement in ION with minimum SS value. The improvement of SS, switching ratio and Vth can be observed with temperature fall. The enhancement in performance of various RF/analog attributes such transconductance, device efficiency, transconductance frequency product, gain frequency product, cut-off frequency, and intrinsic gain with lowering of temperature. However, Mch-FinFET device provides a significant improvement of higher-order current and voltage intercept points such as IIP3, VIP2, VIP3, and 1 dB compression point with lesser harmonic distortion such as HD2, HD3, and THD at elevated temperature. The superior efficiency of DC and RF/analog attributes, greater linearity, and minor harmonic distortion performance of Mch-FinFET make it more considerable to design low power Complementary metal–oxide–semiconductor (CMOS) circuits.