Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect

Abstract

In this paper, the RF and analog performances of the triple material gate (TMG) step Fin (SF) FinFET, step drain (SD) FinFET, and step source (SS) FinFET have been explored by 3D TCAD simulation. We have simulated the performance in the presence of uniform trap (UT) and Gaussian trap (GT) distribution with a fixed value of trap concentration (1012 eV−2cm−2). The various DC parameters, such as threshold voltage (Vth), sub-threshold swing (SS), and switching ratio, are observed in trap distribution. The outcome of this simulation study is that the SF FinFET structure has shown 25.1% and 33.95% enhancement of drive current compared to SD FinFET and SS FinFET, respectively. On the other hand, SS FinFET has shown an enhancement of 1.2x(9.8x) on gain transconductance frequency product (GTFP), 1.21x(1.01x) of transconductance frequency product (TFP), 4.19x(23.28x) of intrinsic gain (Av), 1.88x(21.21x) of gain frequency product (GFP), and 4.18x(9.69x) of the gain-bandwidth product (GBP) compared to SD FinFET (SF FinFET).