Temperature effect on RF/analog and linearity parameters in DMG FinFET

Abstract

We systemically investigated the impact of variation in temperature on electrical parameters for a dual material gate (DMG) FinFET. We have highlighted the DC performance such as drain current characteristics, subthreshold swing (SS), and Ion/Ioff for the variation in temperature from 200 to 350 K. Furthermore, the influence of temperature on RF/Analog parameters like transconductance (gm), output conductance (gd), gate capacitance (CGG), intrinsic delay, transconductance generation factor (TGF = gm/ID), intrinsic gain (gm/gd), cutoff frequency (ft), gain frequency product (GFP), transconductance frequency product (TFP), and gain transconductance frequency product (GTFP) are presented through TCAD simulator. We also discussed the influence of temperature on linearity parameters like gm2, gm3, VIP2, VIP3, IMD3, IIP3, and 1-dB compression point. A comparative study between DMG and single material gate (SMG) FinFET is also investigated.