Abstract
We study the effect of non-ideal surface conditions on the characteristics of submicrometer type-II InP/GaAsSb double heterostructure bipolar transistors (DHBTs) by comparing two-dimensional numerical simulations with measured device characteristics. The inclusion of surface effects in simulations enables excellent agreement with measured Gummel characteristics and measured emitter size effects, and shows that recombination at the emitter mesa periphery on the extrinsic base surface is the major source on non-ideality in device characteristics. The simulations also demonstrate that AlInAs emitters should result in weaker surface recombination and emitter size effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
