Abstract
Surface recombination effects are studied in non-passivated non-self-aligned and self-aligned NpN InP-GaAsSb-InP double heterostructure bipolar transistors (DHBTs) down to submicrometer emitter dimensions, and over current densities ranging from 10 A/cm/sup 2/ to 100 kA/cm/sup 2/. The present study is motivated by the drive to scale InP DHBTs for higher speeds and integration densities. Self-aligned InP-GaAsSb-InP DHBTs are characterized by weak emitter size effects (ESEs), and periphery recombination currents are found to be very nearly identical to published results for InP-GaInAs SHBTs despite the major differences in emitter junction band alignments ("type-II" versus "type-I") and injection mechanisms (thermal versus hot electron injection). The correspondence of measured periphery currents in both systems indicates that ESEs are dominated by a mechanism common to InP-GaAsSb and InP-GaInAs devices: this requirement is fulfilled by the direct electron injection from the InP emitter mesa sidewalls onto the extrinsic base surface. Consideration of band alignments and surface depletion effects at the extrinsic base surface is used to explain the commonality of emitter size effects in InP-GaAsSb and InP-GaInAs devices.
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