Abstract
We discuss the design and fabrication of high-performance InP/GaAsSb/InP NpN double heterostructure bipolar transistors (DHBTs) grown by MOCVD with heavy carbon doping in the GaAsSb base layer. The staggered (type II) band lineup at InP-GaAsSb heterojunctions allows the growth of abrupt E/B and C/B heterojunctions, thus greatly simplifying the growth and implementation of DHBTs. In addition, C-doped GaAsSb base layers are essentially free of H-passivation effects and can be doped to levels as high as 2.5/spl times/10/sup 20/ cm/sup -3/ while maintaining hole mobilities of at least /spl mu//sub p/=25-30 cm/sup 2//Vs for extremely low base sheet resistances. We show that cutoff frequencies in excess of 200 GHz can be achieved while maintaining breakdown voltages /spl ges/6 V thanks to the low impact ionization coefficients in the InP collector. InP/GaAsSb/InP DHBTs therefore show much potential for /spl ges/40 Gb/s applications.
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