Abstract
Electrical properties of Y2O3/SiGe metal-oxide-semiconductor (MOS) capacitors with Al, Au, W and TiN gate electrodes have been evaluated in order to study the impact of the metal gate electrodes on Y2O3/SiGe interface properties. It is found that MOS capacitors with TiN gate electrodes can provide better Y2O3/SiGe MOS interfaces than those with Al, Au or and W gate stacks after post metallization annealing (PMA) at each optimized temperature. The physical origins of interface trap density (Dit) reduction are examined from the viewpoint of the composition and the quality of interfacial layers (ILs).
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