Abstract
• Gate electrode metals have impacts on gate dielectrics and interface properties. • MOS capacitors with Pd gate electrode can provide thinnest CET. • Pd gate electrode provides better MOS interface properties in HfO 2 /InGaAs. Electrical properties of Al 2 O 3 and HfO 2 /InGaAs metal–oxide–semiconductor (MOS) capacitors with Al, Au and Pd gate electrodes have been evaluated in order to study the impact of metal gate electrodes on gate dielectrics and interface properties. It is found that MOS capacitors with Pd gate electrode can provide thinnest capacitance-equivalent-thickness (CET) and better HfO 2 /InGaAs MOS interfaces than those with Al and Au. However, the Al 2 O 3 /InGaAs interface properties are better in Au and Al gate electrodes than in Pd. Thus, the combination of high- k and gate metals must be carefully examined for realizing optimum gate stacks.
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