Abstract
The total ionizing dose (TID) effect on MOSFETs, which use the Bipolar-CMOS-DMOS (BCD) technology, is investigated under different gate biases utilizing X-rays. The threshold voltage, maximum transconductance and subthreshold swing of the device before and after irradiation were obtained. The results indicate that the TID effect is significantly influenced by gate bias. For NMOSFET, the maximum threshold voltage shift occurs at a positive gate bias of 3 V. For PMOSFET, the minimum threshold voltage shift occurs at a negative gate bias of −3 V. The mechanism was revealed to be the result of the combined effects of initial recombination, hole capture, and electron tunneling processes. However, the case of PMOSFET differs from NMOSFET due to the disappearance of electron tunneling and the change in the direction of hole movement under negative gate bias.
Published Version
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