Abstract
Theoretical and experimental research of total ionizing dose (TID) effects on high voltage (HV) MOS transistor I-V characteristics are presented. MOS transistors, manufactured in 2 different Bipolar-CMOS-DMOS (BCD) technological processes, were used in the research. HV MOS are used for power management ICs undergoing harsh radiation. Thus, devices underwent radiation to various TID levels up to 105 krad. The obtained results allowed to modify the SPICE models of transistors taking into account the changes of their characteristics. As the result, it will be possible to evaluate the effects of TID on power management IC's functional characteristics and increase their reliability in future. The results of the study show that BCD 0,5 um has better radiation resistance than BCD 1 um, but breakdown voltage of BCD 1 um is higher than that of BCD 0,5 um.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
